power transistors 1 publication date: february 2003 sjd00024bed 2SB0945 (2sb945) silicon pnp epitaxial planar type for power switching complementary to 2sd1270 features ? low collector-emitter saturation voltage v ce(sat) ? satisfactory linearity of forward current transfer ratio h fe ? large collector current i c ? full-pack package which can be installed to the heat sink with one screw. absolute maximum ratings t c = 25 c electrical characteristics t c = 25 c 3 c unit: mm parameter symbol conditions min typ max unit collector-emitter voltage (base open) v ceo i c = ? 10 ma, i b = 0 ? 80 v collector-base cutoff current (emitter open) i cbo v cb = ? 100 v, i e = 0 ? 10 a emitter-base cutoff current (collector open) i ebo v eb = ? 5 v, i c = 0 ? 50 a forward current transfer ratio h fe1 v ce = ? 2 v, i c = ? 0.1 a 45 ? h fe2 * v ce = ? 2 v, i c = ? 2 a 60 260 collector-emitter saturation voltage v ce(sat) i c = ? 4 a, i b = ? 0.2 a ? 0.5 v base-emitter saturation voltage v be(sat) i c = ? 4 a, i b = ? 0.2 a ? 1.5 v transition frequency f t v ce = ? 10 v, i c = ? 0.5 a, f = 10 mhz 30 mhz turn-on time t on i c = ? 2 a, i b1 = ? 0.2 a, i b2 = 0.2 a 0.13 s storage time t stg v cc = ? 50 v 0.50 s fall time t f 0.13 s parameter symbol rating unit collector-base voltage (emitter open) v cbo ? 130 v collector-emitter voltage (base open) v ceo ? 80 v emitter-base voltage (collector open) v ebo ? 7v collector current i c ? 5a peak collector current i cp ? 10 a collector power p c 40 w dissipation t a = 25 c2 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * : rank classification note) the part number in the parenthesis shows conventional part number. rank r q p h fe2 60 to 120 90 to 180 130 to 260 10.0 0.2 5.5 0.2 7.5 0.2 16.7 0.3 0.7 0.1 14.0 0.5 solder dip (4.0) 0.5 +0.2 ?0.1 1.4 0.1 1.3 0.2 0.8 0.1 2.54 0.3 5.08 0.5 2 13 2.7 0.2 4.2 0.2 4.2 0.2 3.1 0.1 1: base 2: collector 3: emitter eiaj: sc-67 to-220f-a1 package
2SB0945 2 sjd00024bed v be(sat) ? i c h fe ? i c f t ? i c p c ? t a i c ? v ce v ce(sat) ? i c c ob ? v cb t on , t stg , t f ? i c safe operation area 0 160 40 120 80 0 10 20 30 40 50 collector power dissipation p c (w) ambient temperature t a ( c) (1)t c =ta (2)with a 100 100 2mm al heat sink (3)with a 50 50 2mm al heat sink (4)without heat sink (p c =2w) (1) (4) (3) (2) 0 ? 2 ? 6 ? 4 ? 8 0 ? 10 ? 2 ? 4 ? 8 ? 6 collector current i c (a) collector-emitter voltage v ce (v) i b =?120ma ?100ma ?80ma ?60ma ?40ma ?30ma ?20ma ?10ma ?3ma t c =25?c ? 0.01 ? 0.01 ? 0.1 ? 1 ? 10 ? 100 ? 0.1 ? 1 ? 10 i c /i b =20 25?c t c =100?c ?5?c collector-emitter saturation voltage v ce(sat) (v) collector current i c (a) ? 0.01 ? 0.01 ? 0.1 ? 1 ? 10 ? 100 ? 0.1 ? 1 ? 10 i c /i b =20 t c =?5?c 25?c 100?c base-emitter saturation voltage v be(sat) (v) collector current i c (a) ? 0.01 ? 0.1 ? 1 ? 10 1 10 forward current transfer ratio h fe collector current i c (a) 10 2 10 4 10 3 v ce =?2v t c =100?c 25?c ?25?c ? 0.01 ? 0.1 ? 1 ? 10 1 10 10 2 10 4 10 3 v ce =?10v f=10mhz t c =25?c collector current i c (a) transition frequency f t (mhz) ? 0.1 ? 1 ? 10 ? 100 1 10 10 2 10 3 10 4 collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb (v) i e =0 f=1mhz t c =25?c 0 ? 3.2 ? 0.8 ? 2.4 ? 1.6 0.01 0.1 1 10 100 turn-on time t on , storage time t stg , fall time t f ( s ) collector current i c (a) t stg t on t f pulsed t w =1ms duty cycle=1% i c /i b =10 (?i b1 =i b2 ) v cc =?50v t c =25?c ? 0.01 ? 1 ? 0.1 ? 1 ? 10 ? 100 ? 10 ? 100 ? 1 000 collector current i c (a) collector-emitter voltage v ce (v) t=1ms t=10ms t=0.5ms i cp i c non repetitive pulse t c =25?c dc
2SB0945 3 sjd00024bed r th ? t 10 ? 2 10 ? 1 1 10 10 3 10 2 10 ? 4 10 4 10 3 10 2 10 1 10 ? 1 10 ? 2 10 ? 3 time t (s) thermal resistance r th ( c/w) (1) (2) (1)without heat sink (2)with a 100 100 2mm al heat sink
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